Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey

Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.Comment: 4pages, 2 figure

High-Resolution Photoemission Study of Fine Electronic Structure in the Vicinity of the Fermi Level of High-T_c Superconductors(Abstracts of Doctoral Dissertations,Annual Report(from April 2001 to March 2002))

Above experimental facts show that electron- and hole-doped HTSCs share common features in the topology of FS and the symmetry of superconducting gap. This indicates that essential framework of the superconductivity is the same between electron- and hole-doped HTSCs

Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2

We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.Comment: 4 pages, 4 figure